Document
Alfa-MOS
Technology
AFN9004S
40V N-Channel Enhancement Mode MOSFET
General Description
AFN9004S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
40V/25A,RDS(ON)= 3.3mΩ@VGS=10V 40V/20A,RDS(ON)= 4.1mΩ@VGS=4.5V Super high density cell design for extremely low RDS
(ON)
TO-263-2L package design
Pin Description ( TO-263-2L )
Application
Power supply --- Secondary synchronous rectification DC/DC converter Power tools
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Information
Part Ordering No.
Part Marking
9004S
Package
AFN9004ST263RG
AAAAAA
TO-263-2L
BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN9004ST263RG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Nov. 2015
Description Gate Drain Source
Unit Tape & Reel
Quantit.