AFN1010S

Alfa-MOS Technology AFN1010S 100V N-Channel Enhancement Mode MOSFET General Description AFN1010S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial applications. Pin Description ( TO-220-3L ) Features z 100V/15A,RDS(ON)= 9mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for low RDS (ON) z TO-220-3L package design Application z Power Supply - Secondary Synchronous Rectification z DC/DC converter z DC/AV inverter z Power tools z Motor drive switch Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part Marking Package AFN1010S AFN1010ST220TG AAAAAA TO-220-3L BBBBBB ※ A Lot code ※ B Date code ※ AFN1010ST220TG : Tube ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp. Rev.A Jan. 2018 Description Gate Drain Sour...