N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
AFN1010S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN1010S, N-Channel enhancemen...
Description
Alfa-MOS
Technology
AFN1010S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN1010S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial applications.
Pin Description ( TO-220-3L )
Features
z 100V/15A,RDS(ON)= 9mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for low RDS (ON) z TO-220-3L package design
Application
z Power Supply - Secondary Synchronous Rectification z DC/DC converter z DC/AV inverter z Power tools z Motor drive switch
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Information
Part Ordering No.
Part Marking
Package
AFN1010S
AFN1010ST220TG
AAAAAA
TO-220-3L
BBBBBB
※ A Lot code ※ B Date code
※ AFN1010ST220TG : Tube ; Pb- Free ; Halogen –Free
©Alfa-MOS Technology Corp. Rev.A Jan. 2018
Description Gate Drain Sour...
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