Document
Alfa-MOS
Technology
AFN1055S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN1055S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-220-3L )
Features
100V/40A,RDS(ON)=6.0mΩ@VGS=10V 100V/20A,RDS(ON)=9.0mΩ@VGS=4.5V Super high density cell design for extremely low
RDS (ON) TO-220-3L package design
Application
Power Supply - Secondary Synchronous Rectification Industrial Primary Switch
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Information
Part Ordering No.
Part Marking
Package
AFN1055S
AFN1055ST220TG
AAAAAA
TO-220-3L
BBBBBB
※ A Lot code ※ B Date code
※ AFN1055ST220TG : Tube ; Pb- Free ; Halogen –Free
©Alfa-MOS Technology Corp. Rev.A Jan. 2018
Description Gate Drain Source
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