AFN1055S

Alfa-MOS Technology AFN1055S 100V N-Channel Enhancement Mode MOSFET General Description AFN1055S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-220-3L ) Features  100V/40A,RDS(ON)=6.0mΩ@VGS=10V  100V/20A,RDS(ON)=9.0mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  TO-220-3L package design Application  Power Supply - Secondary Synchronous Rectification  Industrial  Primary Switch Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part Marking Package AFN1055S AFN1055ST220TG AAAAAA TO-220-3L BBBBBB ※ A Lot code ※ B Date code ※ AFN1055ST220TG : Tube ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp. Rev.A Jan. 2018 Description Gate Drain Source ...