AFN1610S

Alfa-MOS Technology AFN1610S 100V N-Channel Enhancement Mode MOSFET General Description AFN1610S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-220-3L ) Features 100V/10A,RDS(ON)= 22mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application DC/DC Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV ndustrial Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part Marking Package AFN1610S AFN1610ST220TG AAAAAA TO-220-3L BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN1610ST220TG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Jan. 2014 Description Gate Drain Source Unit Tube Quantity 50 EA www.alfa-mos.com...