Alfa-MOS
Technology
AFN1610S
100V N-Channel
Enhancement Mode MOSFET
General Description
AFN1610S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage
power management, and low in-line power loss are
needed in commercial industrial surface mount
applications.
Pin Description ( TO-220-3L )
Features
100V/10A,RDS(ON)= 22mΩ@VGS=10V
Super high density cell design for extremely low
RDS (ON)
TO-220-3L package design
Application
DC/DC Primary Side Switch
POL Synchronous buck converter
LED Backlight for LCD TV ndustrial
Pin Define
Pin
1
2
3
Symbol
G
D
S
Ordering Information
Part Ordering No.
Part Marking
Package
AFN1610S
AFN1610ST220TG
AAAAAA
TO-220-3L
BBBBBB
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN1610ST220TG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Jan. 2014
Description
Gate
Drain
Source
Unit
Tube
Quantity
50 EA
www.alfa-mos.com
Page 1
