Document
Alfa-MOS
Technology
AFN1610S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN1610S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-220-3L )
Features
100V/10A,RDS(ON)= 22mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
DC/DC Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV ndustrial
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Information
Part Ordering No.
Part Marking
Package
AFN1610S
AFN1610ST220TG
AAAAAA
TO-220-3L
BBBBBB
ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN1610ST220TG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Jan. 2014
Description Gate Drain Source
Unit Tube
Quantity 50 EA
www.alfa-mos.com.