AFN3606S

Alfa-MOS Technology General Description AFN3606S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-220-3L ) AFN3606S 30V N-Channel Enhancement Mode MOSFET Features 30V/45A,RDS(ON)=5.0mΩ@VGS=10V 30V/30A,RDS(ON)=6.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Buck Converter − High Side − Low Side Synchronous Rectifier − Secondary Rectifier Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part Marking Package AFN3606S AFN3606ST220TG AAAAAA TO-220-3L BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN3606ST220TG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Apr. 2012 Description Gate Drain Source Unit Tube Quantity...