N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFN3606S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN3606S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-220-3L )
AFN3606S
30V N-Channel Enhancement Mode MOSFET
Features
30V/45A,RDS(ON)=5.0mΩ@VGS=10V 30V/30A,RDS(ON)=6.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
Buck Converter − High Side − Low Side
Synchronous Rectifier − Secondary Rectifier
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3606S
AFN3606ST220TG
AAAAAA
TO-220-3L
BBBBBB ϡʳ A Lot code ϡʳ B Date code
ϡʳ AFN3606ST220TG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Apr. 2012
Description Gate Drain Source
Unit Tube
Quantity...
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