Document
Alfa-MOS
Technology
General Description
AFN3609S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-220-3L )
AFN3609S
30V N-Channel Enhancement Mode MOSFET
Features
30V/35A,RDS(ON)=6mΩ@VGS=10V 30V/20A,RDS(ON)=9mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
Buck Converter − High Side − Low Side
Synchronous Rectifier − Secondary Rectifier
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3609S
AFN3609ST220TG
AAAAAA
TO-220-3L
BBBBBB ϡʳ A Lot code ϡʳ B Date code
ϡʳ AFN3609ST220TG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Jan. 2012
Description Gate Drain Source
Unit Tube
Quantity 50 .