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AFN3609S Dataheets PDF



Part Number AFN3609S
Manufacturers Alfa-MOS
Logo Alfa-MOS
Description N-Channel Enhancement Mode MOSFET
Datasheet AFN3609S DatasheetAFN3609S Datasheet (PDF)

Alfa-MOS Technology General Description AFN3609S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-220-3L ) AFN3609S 30V N-Channel Enhancement Mode MOSFET Features 30V/35A,RDS(ON)=6mΩ@VGS=10V 30V/20A,RDS(ON)=9mΩ@VGS=4.5V Super high density cell desig.

  AFN3609S   AFN3609S



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Alfa-MOS Technology General Description AFN3609S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-220-3L ) AFN3609S 30V N-Channel Enhancement Mode MOSFET Features 30V/35A,RDS(ON)=6mΩ@VGS=10V 30V/20A,RDS(ON)=9mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Buck Converter − High Side − Low Side Synchronous Rectifier − Secondary Rectifier Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part Marking Package AFN3609S AFN3609ST220TG AAAAAA TO-220-3L BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN3609ST220TG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Jan. 2012 Description Gate Drain Source Unit Tube Quantity 50 .


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