AFN3630

Alfa-MOS Technology General Description AFN3630, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-220-3L ) AFN3630 30V N-Channel Enhancement Mode MOSFET Features 30V/20A,RDS(ON)=30mΩ@VGS=10V 30V/15A,RDS(ON)=38mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Power Management in Desktop Computer DC/DC Converter LCD Display inverter Pin Define Pin Symbol 1G 2D 3S Ordering Information Part Ordering No. Part Marking Package AFN3630 AFN3630T220TG AAAAAA TO-220-3L BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN3630T220TG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Jun. 2012 Description Gate Drain Source Unit Tube Quantity 50 EA www.alfa-mos.co...