Alfa-MOS
Technology
General Description
AFN3684S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( TO-220-3L )
AFN3684S
30V N-Channel
Enhancement Mode MOSFET
Features
30V/30A,RDS(ON)=9mΩ@VGS=10V
30V/18A,RDS(ON)=13mΩ@VGS=4.5V
Super high density cell design for extremely
low RDS (ON)
TO-220-3L package design
Application
Buck Converter
− Low Side
Synchronous Rectifier
− Secondary Rectifier
Pin Define
Pin
1
2
3
Symbol
G
D
S
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3684S
AFN3684ST220TG
AAAAAA
TO-220-3L
BBBBBB
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN3684ST220TG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.A Jan. 2012
Description
Gate
Drain
Source
Unit
Tube
Quantity
50 EA
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