N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
AFN6003S
60V N-Channel Enhancement Mode MOSFET
General Description
AFN6003S, N-Channel enhancement...
Description
Alfa-MOS
Technology
AFN6003S
60V N-Channel Enhancement Mode MOSFET
General Description
AFN6003S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-220-3L )
Features
60V/50A,RDS(ON)= 4mΩ@VGS=10V 60V/25A,RDS(ON)= 6mΩ@VGS=6V Super high density cell design for extremely low RDS
(ON)
TO-220-3L package design
Application
Synchronous Rectifier Power Supplies
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Information
Part Ordering No.
Part Marking
Package
AFN6003S
AFN6003ST220TG
AAAAAA
TO-220-3L
BBBBBB
ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN6003ST220TG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Mar. 2016
Description Gate Drain Source
Unit Tube
Quantity 50 EA
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