N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
AFN6011S
65V N-Channel Enhancement Mode MOSFET
General Description
AFN6011S, N-Channel enhancement...
Description
Alfa-MOS
Technology
AFN6011S
65V N-Channel Enhancement Mode MOSFET
General Description
AFN6011S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
65V/40A, RDS(on)= 7.8mΩ@VGS=10V 65V/20A, RDS(on)=10mΩ@VGS=6.0V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Pin Description ( TO-220-3L )
Application
Synchronous Rectifier Power Supplies
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Information
Part Ordering No.
Part Marking
Package
AFN6011S
AFN6011ST220TG
AAAAAA
TO-220-3L
BBBBBB
ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN6011ST220TG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.D Dec. 2013
Description Gate Drain Source
Unit Tube
Quantity 50 EA
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