AFN6018S

Alfa-MOS Technology AFN6018S 60V N-Channel Enhancement Mode MOSFET General Description AFN6018S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 60V/25A,RDS(ON)= 15mΩ@VGS=10V 60V/15A,RDS(ON)= 18mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Pin Description ( TO-220-3L ) Application Synchronous Rectifier Power Supplies Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part Marking Package AFN6018S AFN6018ST220TG AAAAAA TO-220-3L BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN6018ST220TG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.B Jan. 2012 Description Gate Drain Source Unit Tube Quantity 50 EA www.alfa-mos.com Page 1 Alfa-MOS Techno...