N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
65 General Description
AFN9803S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology ...
Description
Alfa-MOS
Technology
65 General Description
AFN9803S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-220-3L )
AFN9803S
30V N-Channel Enhancement Mode MOSFET
Features
30V/40A,RDS(ON)=2.8mΩ@VGS=10V 30V/32A,RDS(ON)=3.8mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design
Application
OR-ing Server DC/DC
Pin Define
Pin 1 2 3
Symbol G D S
Ordering Information
Part Ordering No.
Part Marking
Package
AFN9803S
AFN9803ST220TG
AAAAAA
TO-220-3L
ϡʳ A Lot code ϡʳ B Date code
BBBBBB
ϡʳ AFN9803ST220TG : Tube ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Jan. 2014
Description Gate Drain Source
Unit Tube
Quantity 50 EA
www.alfa-mos.com
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Alfa-MOS
Technology
AFN9803S
...
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