AFN9803S

Alfa-MOS Technology 65 General Description AFN9803S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-220-3L ) AFN9803S 30V N-Channel Enhancement Mode MOSFET Features 30V/40A,RDS(ON)=2.8mΩ@VGS=10V 30V/32A,RDS(ON)=3.8mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application OR-ing Server DC/DC Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part Marking Package AFN9803S AFN9803ST220TG AAAAAA TO-220-3L ϡʳ A Lot code ϡʳ B Date code BBBBBB ϡʳ AFN9803ST220TG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Jan. 2014 Description Gate Drain Source Unit Tube Quantity 50 EA www.alfa-mos.com Page 1 Alfa-MOS Technology AFN9803S ...