AFP6679S

Alfa-MOS Technology General Description AFP6679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-220-3L ) AFP6679S 30V P-Channel Enhancement Mode MOSFET Features -30V/-20A,RDS(ON)= 9.8mΩ@VGS=-10V -30V/-15A,RDS(ON)=14mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Application Power Switch Load switch in high current applications DC/DC converters Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No. Part Marking Package AFP6679ST220TG AFP6679S AAAAAA TO-220-3L BBBBBB ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP6679ST220TG : Tube ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Nov. 2015 Description Gate Drain Source Unit Tube Quantity 50 EA www....