AFP3050S

Alfa-MOS Technology General Description AFP3050S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP3050S 30V P-Channel Enhancement Mode MOSFET Features -30V/-9A,RDS(ON)=60mΩ@VGS=-10V -30V/-7A,RDS(ON)=72mΩ@VGS=-4.5V -30V/-5A,RDS(ON)=108mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application LED Display Load Switch CCFL Inverter Power Management in Notebook Computer, Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP3050ST252RG 3050S TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP3050ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A July 2010 Description Gate Source Drain...