P-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFP3485, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Description
Alfa-MOS
Technology
General Description
AFP3485, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFP3485
30V P-Channel Enhancement Mode MOSFET
Features
-30V/ -12A,RDS(ON)=28mΩ@VGS=-10V -30V/ -10A,RDS(ON)=37mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Power Management in Desktop Computer DC/DC Converter LCD Display inverter
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP3485T252RG
3485
TO-252-2L
ϡʳ A Lot code ϡʳ B Date code
ϡʳ AFP3485T252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Mar.. 2011
Description Gate Source Drain
Unit Tape & Reel
Quantity 2500 EA
...
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