AFP3485

Alfa-MOS Technology General Description AFP3485, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP3485 30V P-Channel Enhancement Mode MOSFET Features -30V/ -12A,RDS(ON)=28mΩ@VGS=-10V -30V/ -10A,RDS(ON)=37mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Management in Desktop Computer DC/DC Converter LCD Display inverter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP3485T252RG 3485 TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP3485T252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Mar.. 2011 Description Gate Source Drain Unit Tape & Reel Quantity 2500 EA ...