P-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFP3679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFP3679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFP3679S
30V P-Channel Enhancement Mode MOSFET
Features
-30V/-20A,RDS(ON)=10mΩ@VGS=-10V -30V/-15A,RDS(ON)=15mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Power Switch Load Switch in High Current Applications DC/DC Converters
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP3679ST252RG
3679S
TO-252-2L
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFP3679ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free
©Alfa-MOS Technology Corp. Rev.A Aug. 2012
Description Gate Source Drain
Unit Tape & Reel
Quantity 2500 E...
Similar Datasheet