AFP3679S

Alfa-MOS Technology General Description AFP3679S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP3679S 30V P-Channel Enhancement Mode MOSFET Features -30V/-20A,RDS(ON)=10mΩ@VGS=-10V -30V/-15A,RDS(ON)=15mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Switch Load Switch in High Current Applications DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP3679ST252RG 3679S TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP3679ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp. Rev.A Aug. 2012 Description Gate Source Drain Unit Tape & Reel Quantity 2500 E...