Document
Alfa-MOS
Technology
General Description
AFP4447, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFP4447
40V P-Channel Enhancement Mode MOSFET
Features
-40V/ -10A,RDS(ON)= 40mΩ@VGS= -10V -40V/ -8A,RDS(ON)= 55mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Backlight Inverter for LCD Display Full Bridge DC/DC Converter LED Display Load Switch CCFL Inverter
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP4447T252RG
4447
TO-252-2L
ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP4447T252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Oct. 2011
Description Gate Source Drain
Unit Ta.