AFP4447

Alfa-MOS Technology General Description AFP4447, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP4447 40V P-Channel Enhancement Mode MOSFET Features -40V/ -10A,RDS(ON)= 40mΩ@VGS= -10V -40V/ -8A,RDS(ON)= 55mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Backlight Inverter for LCD Display Full Bridge DC/DC Converter LED Display Load Switch CCFL Inverter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP4447T252RG 4447 TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP4447T252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Oct. 2011 Description Gate Source Drain Unit Ta...