AFP5010S

Alfa-MOS Technology General Description AFP5010S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP5010S 100 P-Channel Enhancement Mode MOSFET Features -100/-18A,RDS(ON)= 46mΩ@VGS= -10V -100/-10A,RDS(ON)= 52mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Switch DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP5010ST252RG 5010S TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP5010ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A May 2015 Description Gate Source Drain Unit Tape & Reel Quantity 2500 EA www.alfa-mos.com Page 1 Alfa-MOS Tec...