Document
Alfa-MOS
Technology
General Description
AFP9530S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFP9530S
60V P-Channel Enhancement Mode MOSFET
Features
-60V/-25A,RDS(ON)= 26mΩ@VGS= -10V -60V/-15A,RDS(ON)= 36mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Load Switches Half-Bridge Motor Drives High Voltage Non-Synchronous Buck Converters
Pin Define
Pin 1 2 3
Symbol G S D
Description Gate Source Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFP9530ST252RG
9530S
TO-252-2L
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFP9530ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A June 2015
Unit Tape & Reel
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