P-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFP9560S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFP9560S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFP9560S
40V P-Channel Enhancement Mode MOSFET
Features
-40V/ -14A,RDS(ON)= 13mΩ@VGS= -10V -40V/ -12A,RDS(ON)= 18mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Power Switch Load Switch in High Current Applications DC/DC Converters
Pin Define
Pin 1 2 3
Symbol G S D
Description Gate Source Drain
Ordering Information
Part Ordering No.
Part Marking
Package
AFP9560ST252RG
9560S
TO-252-2L
ϡʳ A Lot code ϡʳ B Date code
ϡʳ AFP9560ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.C Jan. 2014
Unit Tape & Reel
Quantity 250...
Similar Datasheet