P-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFP9565S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFP9565S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFP9565S
40V P-Channel Enhancement Mode MOSFET
Features
-40V/ -8.6A,RDS(ON)= 58mΩ@VGS= -10V -40V/ -6.2A,RDS(ON)= 86mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Backlight Inverter for LCD Display Full Bridge DC/DC Converter LED Display Load Switch CCFL Inverter
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP9565ST252RG
9565S
TO-252-2L
ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP9565ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Mar. 2012
Description Gate Source Drain
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