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AFP9565S

Alfa-MOS

P-Channel Enhancement Mode MOSFET

Alfa-MOS Technology General Description AFP9565S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...


Alfa-MOS

AFP9565S

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Description
Alfa-MOS Technology General Description AFP9565S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP9565S 40V P-Channel Enhancement Mode MOSFET Features -40V/ -8.6A,RDS(ON)= 58mΩ@VGS= -10V -40V/ -6.2A,RDS(ON)= 86mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Backlight Inverter for LCD Display Full Bridge DC/DC Converter LED Display Load Switch CCFL Inverter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP9565ST252RG 9565S TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP9565ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Mar. 2012 Description Gate Source Drain ...




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