Alfa-MOS
Technology
mGeneral Description
AFP9569, P-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( TO-252-2L )
AFP9569
40V P-Channel
Enhancement Mode MOSFET
Features
-40V/ -10A,RDS(ON)=100mΩ@VGS= -10V
-40V/ -6A,RDS(ON)= 110mΩ@VGS= -4.5V
Super high density cell design for extremely
low RDS (ON)
TO-252-2L package design
Application
Backlight Inverter for LCD Display
Full Bridge DC/DC Converter
LED Display
Load Switch
CCFL Inverter
Pin Define
Pin
1
2
3
Symbol
G
S
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP9569T252RG
9565
TO-252-2L
※ A Lot code
※ B Date code
※ AFP9569T252RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free
©Alfa-MOS Technology Corp.
Rev.B Mar. 2017
Description
Gate
Source
Drain
Unit
Tape & Reel
Quantity
2500 EA
www.alfa-mos.com
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