AFP9569

Alfa-MOS Technology mGeneral Description AFP9569, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFP9569 40V P-Channel Enhancement Mode MOSFET Features  -40V/ -10A,RDS(ON)=100mΩ@VGS= -10V  -40V/ -6A,RDS(ON)= 110mΩ@VGS= -4.5V  Super high density cell design for extremely low RDS (ON)  TO-252-2L package design Application  Backlight Inverter for LCD Display  Full Bridge DC/DC Converter  LED Display  Load Switch  CCFL Inverter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFP9569T252RG 9565 TO-252-2L ※ A Lot code ※ B Date code ※ AFP9569T252RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp. Rev.B Mar. 2017 D...