P-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFP9576, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Description
Alfa-MOS
Technology
General Description
AFP9576, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFP9576
60V P-Channel Enhancement Mode MOSFET
Features
-60V/-14A,RDS(ON)= 115mΩ@VGS= -10V -60V/-10A,RDS(ON)= 125mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Backlight Inverter for LCD Display Full Bridge DC/DC Converter LED Display Load Switch CCFL Inverter
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFP9576T252RG
9576
TO-252-2L
ϡʳ A Lot code ϡʳ B Date code ϡʳ AFP9576T252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.B Apr. 2011
Description Gate Source Drain
Unit T...
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