AFN2014

Alfa-MOS Technology General Description AFN2014, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFN2014 20V N-Channel Enhancement Mode MOSFET Features 20V/ 10A,RDS(ON)=14mΩ@VGS=4.5V 20V/ 8A,RDS(ON)=17mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=21mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Management in Desktop Computer DC/DC Converter LCD Display inverter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN2014T252RG 2014 TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN2014T252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Nov. 2010 Description Gate Source Drain Unit Tape ...