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AFN2024S Dataheets PDF



Part Number AFN2024S
Manufacturers Alfa-MOS
Logo Alfa-MOS
Description N-Channel Enhancement Mode MOSFET
Datasheet AFN2024S DatasheetAFN2024S Datasheet (PDF)

Alfa-MOS Technology General Description AFN2024S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFN2024S 20V N-Channel Enhancement Mode MOSFET Features 20V/ 9A,RDS(ON)=32mΩ@VGS=4.5V 20V/ 7A,RDS(ON)=35mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=45mΩ@VGS=1.

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Alfa-MOS Technology General Description AFN2024S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFN2024S 20V N-Channel Enhancement Mode MOSFET Features 20V/ 9A,RDS(ON)=32mΩ@VGS=4.5V 20V/ 7A,RDS(ON)=35mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=45mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Management in Desktop Computer DC/DC Converter LCD Display inverter Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN2024ST252RG 2024S TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN2024ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Jan. 2016 Description Gate Source Drain Unit T.


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