N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFN3006S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN3006S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFN3006S
30V N-Channel Enhancement Mode MOSFET
Features
30V/45A,RDS(ON)=6mΩ@VGS=10V 30V/30A,RDS(ON)=9mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Buck Converter − High Side − Low Side
Synchronous Rectifier − Secondary Rectifier
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3006ST252RG
3006S
TO-252-2L
ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN3006ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Jan. 2012
Description Gate Source Drain
Unit Tape & Reel
Quantity 2...
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