AFN3019S

Alfa-MOS Technology General Description AFN3019S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFN3019S 30V N-Channel Enhancement Mode MOSFET Features  30V/35A,RDS(ON)=9mΩ@VGS=10V  30V/20A,RDS(ON)=13mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  TO-252-2L package design Application  Buck Converter − Low Side  Synchronous Rectifier − Secondary Rectifier Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN3019ST252RG 3019S TO-252-2L ※ A Lot code ※ B Date code ※ AFN3019ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp. Rev.B June 2018 Description Gate Source Drain Unit Tape & Reel ...