Alfa-MOS
Technology
General Description
AFN3025S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low in-line
power loss are needed in commercial industrial
surface mount applications.
Pin Description ( TO-252-2L )
AFN3025S
30V N-Channel
Enhancement Mode MOSFET
Features
30V/9.0A,RDS(ON)=32mΩ@VGS=10V
30V/7.0A,RDS(ON)=36mΩ@VGS=4.5V
30V/5.0A,RDS(ON)=42mΩ@VGS=2.5V
Super high density cell design for extremely
low RDS (ON)
TO-252-2L package design
Application
DC/DC Converter
Load Switch
CCFL Inverter
Power Management in Notebook Computer
Pin Define
Pin
1
2
3
Symbol
G
S
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3025ST252RG
3025S
TO-252-2L
ϡʳ A Lot code
ϡʳ B Date code
ϡʳ AFN3025ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp.
Rev.B Sep. 2010
Description
Gate
Source
Drain
Unit
Tape & Reel
Quantity
2500 EA
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