N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFN3025S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to ...
Description
Alfa-MOS
Technology
General Description
AFN3025S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFN3025S
30V N-Channel Enhancement Mode MOSFET
Features
30V/9.0A,RDS(ON)=32mΩ@VGS=10V 30V/7.0A,RDS(ON)=36mΩ@VGS=4.5V 30V/5.0A,RDS(ON)=42mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
DC/DC Converter Load Switch CCFL Inverter Power Management in Notebook Computer
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3025ST252RG
3025S
TO-252-2L
ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN3025ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.B Sep. 2010
Description Gate Source Drain
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