N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
General Description
AFN3030, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to p...
Description
Alfa-MOS
Technology
General Description
AFN3030, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Description ( TO-252-2L )
AFN3030
30V N-Channel Enhancement Mode MOSFET
Features
30V/12A,RDS(ON)= 30mΩ@VGS=10V 30V/10A,RDS(ON)= 40mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Application
Power Management in Desktop Computer DC/DC Converter LCD Display inverter
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN3030T252RG
3030
TO-252-2L
ϡʳ A Lot code ϡʳ B Date code
ϡʳ AFN3030T252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Nov. 2010
Description Gate Source Drain
Unit Tape & Reel
Quantity 2500 EA
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