AFN5004S

Alfa-MOS Technology General Description AFN5004S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFN5004S 40V N-Channel Enhancement Mode MOSFET Features 40V/20A,RDS(ON)= 5.5mΩ@VGS=10V 40V/15A,RDS(ON)= 6.5mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application LCD Display Backlight Inverters DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN5004ST252RG 5004S TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN5004ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Aug. 2013 Description Gate Source Drain Unit Tape & Reel Quantity 2500 EA www.alfa-mos.com Page 1 ...