AFN5008S

Alfa-MOS Technology General Description AFN5008S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( TO-252-2L ) AFN5008S 40V N-Channel Enhancement Mode MOSFET Features z 40V/20A,RDS(ON)= 8.5mΩ@VGS=10V z 40V/15A,RDS(ON)= 9.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Application z LCD Display Backlight Inverters z DC/DC Converters Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN5008ST252RG 5008S TO-252-2L ※ A Lot code ※ B Date code ※ AFN5008ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp. Rev.B Jan. 2018 Description Gate Source Drain Unit Tape & Reel Quantity 2500 EA www.alfa-mos....