AFN5296S

Alfa-MOS Technology AFN5296S 100V N-Channel Enhancement Mode MOSFET General Description AFN5296S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features z 100V/20A,RDS(ON)=7.2mΩ@VGS=10V z 100V/15A,RDS(ON)=10.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z TO-252-2L package design Pin Description ( TO-252-2L ) Application z Primary Side Switch z POL Synchronous buck converter z LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN5296ST252RG 5296S TO-252-2L ※ A Lot code ※ B Date code ※ AFN5296ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp. Rev.A Jan. 2018 Description Gate Source Drain Unit Tape & Ree...