Document
Alfa-MOS
Technology
AFN5296S
100V N-Channel Enhancement Mode MOSFET
General Description
AFN5296S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
z 100V/20A,RDS(ON)=7.2mΩ@VGS=10V z 100V/15A,RDS(ON)=10.5mΩ@VGS=4.5V z Super high density cell design for extremely low
RDS (ON) z TO-252-2L package design
Pin Description ( TO-252-2L )
Application
z Primary Side Switch z POL Synchronous buck converter z LED Backlight for LCD TV
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN5296ST252RG
5296S
TO-252-2L
※ A Lot code ※ B Date code
※ AFN5296ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free
©Alfa-MOS Technology Corp. Rev.A Jan. 2018
Description Gate Source Drain
Unit Tape & Ree.