Alfa-MOS
Technology
AFN6027S
60V N-Channel
Enhancement Mode MOSFET
General Description
AFN6027S, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology to
provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage
power management, and low in-line power loss are
needed in commercial industrial surface mount
applications.
Features
z 60V/40A,RDS(ON)= 5.0mΩ@VGS=10V
z 60V/30A,RDS(ON)= 6.2mΩ@VGS=6.0V
z 60V/20A,RDS(ON)= 8.4mΩ@VGS=4.5V
z Super high density cell design for extremely low
RDS (ON)
z TO-252-2L package design
Pin Description ( TO-252-2L )
Application
z Motor and Load Control
z Power Management in White LED System
z Push Pull Converter
z LCD TV Inverter & AD/DC Inverter Systems.
Pin Define
Pin
1
2
3
Symbol
G
S
D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN6027ST252RG
6027S
TO-252-2L
※ A Lot code
※ B Date code
※ AFN6027ST252RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free
©Alfa-MOS Technology Corp.
Rev.B Feb. 2018
Description
Gate
Source
Drain
Unit
Tape & Reel
Quantity
2500 EA
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