N-Channel Enhancement Mode MOSFET
Alfa-MOS
Technology
AFN9498
100V N-Channel Enhancement Mode MOSFET
General Description
AFN9498, N-Channel enhancement ...
Description
Alfa-MOS
Technology
AFN9498
100V N-Channel Enhancement Mode MOSFET
General Description
AFN9498, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
100V/5A,RDS(ON)= 135mΩ@VGS=10V 100V/3A,RDS(ON)= 145mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Pin Description ( TO-252-2L )
Application
LED Backlight for LCD TV High Frequency Boost Converter Telecom Industrial power supplies
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN9498T252RG
9498
TO-252-2L
ϡʳ A Lot code ϡʳ B Date code
ϡʳ AFN9498T252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A May 2013
Description Gate Source Drain
Unit Tape & Reel
Qua...
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