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AFN9910 Dataheets PDF



Part Number AFN9910
Manufacturers Alfa-MOS
Logo Alfa-MOS
Description N-Channel Enhancement Mode MOSFET
Datasheet AFN9910 DatasheetAFN9910 Datasheet (PDF)

Alfa-MOS Technology AFN9910 100V N-Channel Enhancement Mode MOSFET General Description AFN9910, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 100V/4A,RDS(ON)= 320mΩ@VGS=10V 100V/4A,RDS(ON)= 340mΩ@VGS=4.5V Super high density cell design for extremely low RDS.

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Alfa-MOS Technology AFN9910 100V N-Channel Enhancement Mode MOSFET General Description AFN9910, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 100V/4A,RDS(ON)= 320mΩ@VGS=10V 100V/4A,RDS(ON)= 340mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Pin Description ( TO-252-2L ) Application High Frequency Boost Converter LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN9910T252RG 9910 TO-252-2L ϡʳ A Lot code ϡʳ B Date code ϡʳ AFN9910T252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-MOS Technology Corp. Rev.A Sep. 2012 Description Gate Source Drain Unit Tape & Reel Quantity 2500 EA www.alfa-mos.com P.


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