Document
Alfa-MOS
Technology
AFN9977
60V N-Channel Enhancement Mode MOSFET
General Description
AFN9977, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Features
60V/8A,RDS(ON)= 118mΩ@VGS=10V 60V/6A,RDS(ON)= 130mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-252-2L package design
Pin Description ( TO-252-2L )
Application
Motor and Load Control Power Management in White LED System Push Pull Converter LCD TV Inverter & AD/DC Inverter Systems.
Pin Define
Pin 1 2 3
Symbol G S D
Ordering Information
Part Ordering No.
Part Marking
Package
AFN9977T252RG
9977
TO-252-2L
ϡʳ A Lot code ϡʳ B Date code
ϡʳ AFN9977T252RG : 13” Tape & Reel ; Pb- Free ; Halogen- Free
©Alfa-MOS Technology Corp. Rev.A Jul. 2012
Description Gate Sourc.