AFN9997

Alfa-MOS Technology AFN9997 100V N-Channel Enhancement Mode MOSFET General Description AFN9997, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features  100V/8A,RDS(ON)= 120mΩ@VGS=10V  100V/6A,RDS(ON)= 125mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  TO-252-2L package design Pin Description ( TO-252-2L ) Application  High Frequency Boost Converter  LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Part Marking Package AFN9997T252RG 9997 TO-252-2L ※ A Lot code ※ B Date code ※ AFN9997T252RG : 13” Tape & Reel ; Pb- Free ; Halogen –Free ©Alfa-MOS Technology Corp. Rev.D May 2018 Description Gate Source Drain Unit Tape & Reel Quantity 2500 EA...