Document
DATASHEET
HFA3046, HFA3096, HFA3127, HFA3128
Ultra High Frequency Transistor Arrays
FN3076 Rev.16.00 Jan 24, 2019
The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.
The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.
Application note AN9315 illustrates the use of these devices as RF amplifiers.
Related Literature
For a full list of related documents, visit our website:
• HFA3046, HFA3096, HFA3127, HFA3128 device pages
Features
• NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz • NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 • NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V • PNP transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz • PNP current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . . 60 • PNP early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . .20V • Noise figure (50Ω) at 1.0GHz. . . . . . . . . . . . . . . . . . 3.5dB • Collector to collector leakage . . . . . . . . . . . . . . . . . . .<1pA • Complete isolation between transistors • Pin compatible with industry standard 3XXX series arrays • Pb-free (RoHS compliant)
Applications
• VHF/UHF amplifiers • VHF/UHF mixers • IF converters • Synchronous detectors
FN3076 Rev.16.00 Jan 24, 2019
Page 1 of 16
HFA3046, HFA3096, HFA3127, HFA3128
Ordering Information
PART NUMBER (Notes 2, 3)
PART MARKING
TEMP. RANGE TAPE AND REEL
PACKAGE
(°C) (UNITS) (Note 1) (RoHS Compliant)
PKG. DWG. #
HFA3046BZ
HFA3046BZ
-55 to +125
- 14 Ld SOIC
M14.15
HFA3096BZ
HFA3096BZ
-55 to +125
- 16 Ld SOIC
M16.15
HFA3096BZ96
HFA3096BZ
-55 to +125
2.5k 16 Ld SOIC
M16.15
HFA3127BZ
HFA3127BZ
-55 to +125
- 16 Ld SOIC
M16.15
HFA3127BZ96
HFA3127BZ
-55 to +125
2.5k 16 Ld SOIC
M16.15
HFA3127RZ
127Z
-55 to +125
-
16 Ld 3x3 QFN
L16.3x3
HFA3127RZ96
127Z
-55 to +125
6k
16 Ld 3x3 QFN
L16.3x3
HFA3128BZ (No longer available or supported) HFA3128BZ
-55 to +125
- 16 Ld SOIC
M16.15
HFA3128RZ (No longer available or supported) 128Z
-55 to +125
-
16 Ld 3x3 QFN
L16.3x3
NOTE:
1. See TB347 for details about reel specifications.
2. These Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
3. For Moisture Sensitivity Level (MSL), see the HFA3046, HFA3096, HFA3127, or HFA3128 device page. For more information about MSL, see TB363.
FN3076 Rev.16.00 Jan 24, 2019
Page 2 of 16
HFA3046, HFA3096, HFA3127, HFA3128
Pinouts
HFA3046 (14 LD SOIC)
TOP VIEW
1 2 Q1
3 4 Q2
Q5
5 Q4
6
7 Q3
14 13 12 11 10 9 8
HFA3096 (16 LD SOIC)
TOP VIEW
1 2 Q1
3
4 5 Q2
6
7 8 Q3
16 NC 15 Q5 14 13
12 Q4 11
10 9
HFA3127 (16 LD SOIC)
TOP VIEW
1 2 3 4 Q2 NC 5 6 7 8 Q3
16 Q1 15
14 Q5 13
12 11 10 Q4 9
HFA3128 (16 LD SOIC)
TOP VIEW
1 2 3 4 Q2 NC 5 6 7
Q3 8
16 Q1 15
14 Q5 13
12 11 10 Q4 9
HFA3127, HFA3128 (16 LD 3X3 QFN) TOP VIEW
Q2C Q1C Q1E Q1B
16 15 14 13
Q2E 1 Q2B 2
NC 3 Q3C 4
12 Q5B 11 Q5E 10 Q5C 9 Q4C
5678
Q3E Q3B Q4B Q4E
FN3076 Rev.16.00 Jan 24, 2019
Page 3 of 16
HFA3046, HFA3096, HFA3127, HFA3128
Absolute Maximum Ratings
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V Collector Current (100% Duty Cycle) . . . . . 18.5mA at TJ = +150°C
34mA at TJ = +125°C 37mA at TJ = +110°C Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA
Operating Information
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Thermal Information
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
14 Ld SOIC Package (Note 4) . . . . . . . 120
N/A
16 Ld SOIC Package (Note 4) . . . . . . . 115
N/A
QFN Package (Notes 5, 6). . . . . . . . . .
57
10
Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W
.