N-Channel MOSFET. FTP04N60C Datasheet

FTP04N60C MOSFET. Datasheet pdf. Equivalent

FTP04N60C Datasheet
Recommendation FTP04N60C Datasheet
Part FTP04N60C
Description N-Channel MOSFET
Feature FTP04N60C; FTP04N60C FTA04N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications: • Adaptor • Ch.
Manufacture IPS
Datasheet
Download FTP04N60C Datasheet




IPS FTP04N60C
FTP04N60C
FTA04N60C
N-Channel MOSFET
Pb Lead Free Package and Finish
Applications:
• Adaptor
• Charger
• SMPS Standby Power
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP04N60C
FTA04N60C
PACKAGE
TO-220
TO-220F
BRAND
FTP04N60C
FTA04N60C
VDSS
600 V
RDS(ON) (Max.)
2.2 Ω
ID
4.0 A
D
GDS
TO-220 G DS
TO-220F
Packages
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP04N60C FTA04N60C
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
600
4.0 4.0*
Figure 3
Figure 6
86 28
0.69 0.22
V
A
W
W/ oC
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=10 mH, ID=4.0 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30
80
Figure 8
3.0
V
mJ
A
V/ ns
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
300
260
-55 to 150
oC
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
FTP04N60C FTA04N60C
1.45 4.5
62 100
Units
oC/W
Test Conditions
Drain lead soldered to water cooled heatsink, PD ad-
justed for a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2007 InPower Semiconductor Co., Ltd.
FTP04N60C/FTA04N60C REV.A. Dec. 2007



IPS FTP04N60C
OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
BVDSS
ΔBVDSS/Δ TJ
Drain-to-Source Breakdown Voltage
BreakdownVoltage Temperature
Coefficient, Figure 11.
600 --
-- 0.631
Max.
--
--
-- -- 25
IDSS Drain-to-Source Leakage Current
-- -- 25
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-- -- 100
-- -- -100
Units
V
V/ oC
µA
nA
Test Conditions
VGS=0V, ID=250µA
Reference to 25 oC,
ID=250 µA
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TJ=125 oC
VGS=+30 V
VGS= -30V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
VGS(TH)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
--
1.76
Gate Threshold Voltage, Figure 12.
2.0 --
gfs Forward Transconductance
-- 3.75
Max.
2.2
4.0
--
Units
Ω
V
S
Test Conditions
VGS=10V, ID=2.4A
(NOTE *4)
VDS=VGS, ID=250μA
VDS=15V, ID=4A
(NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Ciss
Coss
Crss
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
--
--
--
Typ.
720
66.8
9.3
Max.
--
--
--
Units
pF
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”) Charge
-- 18.7 --
-- 3.7 --
-- 8.9 --
nC
Test Conditions
VGS=0 V
VDS=25 V
f =1.0MHz
Figure 14
VDD=300V
ID=4A
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units
Test Conditions
-- 12 --
-- 17 --
-- 28 --
-- 16 --
ns
VDD=300V
ID=4A
VGS=10 V
RG=9.1 Ω
©2007 InPower Semiconductor Co., Ltd.
FTP04N60C/FTA04N60C REV. A. Dec. 2007
Page 2 of 9



IPS FTP04N60C
Source-Drain Diode Characteristics Tc=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current (Body Diode)
--
--
4
A
ISM
Maximum Pulsed Current (Body Diode)
-- -- 16
A
VSD Diode Forward Voltage
-- -- 1.5 V
trr Reverse Recovery Time
-- 258 387
ns
Qrr Reverse Recovery Charge
-- 1280 1920
nC
Test Conditions
Integral pn-diode
in MOSFET
IS=4A, VGS=0V
VGS=0 V
IF=4A, di/dt=100 A/µs
Notes:
*1. TJ = +25 oC to +150 oC.
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD= 4A di/dt < 100 A/µs, VDD < BVDSS, TJ=+150 oC.
*4. Pulse width < 380µs; duty cycle < 2%.
©2007 InPower Semiconductor Co., Ltd.
FTP04N60C/FTA04N60C REV. A. Dec. 2007
Page 3 of 9







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